bu1006-e3, bu1008-e3, bu1010-e3 www.vishay.com vishay general semiconductor revision: 16-aug-13 1 document number: 84801 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 enhanced isocink+? bridge rectifiers * tested to ul standard for safety electrically isolated semiconductor devices. ul 1557 4th edition. ? dielectric tested to maximum case, storage and junction temperature to 150 c to withstand 1500 v. ? epoxy meets ul 94 v-0 flammability rating. features ? ul recognition file number e309391 (qqqx2) ul 1557 (see *) ? thin single in-line package ? available for bu-5s lead forming option (part number with 5s suffix, e.g. bu10065s) ? superior thermal conductivity ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for switching power supply, home appliances and white-goods applications. mechanical data case: bu molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-e3 - rohs-co mpliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 inches-lbs) max. ? ? ? notes (1) with 60 w air cooled heatsink (2) without heatsink, free air primary characteristics package bu i f(av) 10 a v rrm 600 v, 800 v, 1000 v i fsm 120 a i r 5 a v f at i f = 5.0 a 0.88 v t j max. 150 c diode variations in-line + ~ ~ - - ~ ~ + isocink+? case style bu + ~~ - maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bu1006 bu1008 bu1010 unit maximum repetitive peak reverse voltage v rrm 600 800 1000 v average rectified forward current (fig. 1, 2) t c = 92 c (1) i o 10 a t a = 25 c (2) 3.2 non-repetitive peak forward surge current ? 8.3 ms single sine-wave, t j = 25 c i fsm 120 a rating for fusing (t < 8.3 ms) t j = 25 c i 2 t60a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
bu1006-e3, bu1008-e3, bu1010-e3 www.vishay.com vishay general semiconductor revision: 16-aug-13 2 document number: 84801 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s puls e width, 1 % duty cycle notes (1) with 60 w air cooled heatsink (2) without heatsink, free air ratings and characteristics curves (t a = 25 c unless otherwise specified) fig. 1 - derating curve output rectified current fig. 2 - forward current derating curve electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward ? voltage per diode (1) i f = 5.0 a t a = 25 c v f 0.98 1.05 v t a = 125 c 0.88 0.95 maximum reverse current per diode rated v r t a = 25 c i r -5.0 a t a = 125 c 64 250 typical junction capacitanc e per diode 4.0 v, 1 mhz c j 43 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bu1006 bu1008 bu1010 unit typical thermal resistance r ? jc (1) 3.0 c/w r ? ja (2) 20 ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode bu1006-e3/45 4.55 45 20 tube bu1006-e3/51 4.55 51 250 paper tray bu10065s-e3/45 4.55 45 20 tube 0 60 120 160 0 2 4 6 8 12 case temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) with heatsink sine-wa v e, r-load t c meas u red at de v ice bottom t c t c 10 20 8 0 140 40 100 0 1 2 3 4 ambient temperat u re (c) a v erage for w ard rectified c u rrent (a) 0 50 25 75 100 125 150 witho u t heatsink sine-wa v e, r-load free air, t a
bu1006-e3, bu1008-e3, bu1010-e3 www.vishay.com vishay general semiconductor revision: 16-aug-13 3 document number: 84801 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - forward power dissipation fig. 4 - typical forward characteristics per diode fig. 5 - typical reverse char acteristics per diode fig. 6 - typical junction c apacitance per diode 01234567 8 91011 0 8 12 16 20 24 a v erage for w ard c u rrent (a) for w ard po w er dissipation (w) 4 0.3 1.1 1.2 1.3 0.01 10 0.1 1 100 0.5 0.7 0.9 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c 0.4 0.6 0. 8 1.0 1000 20 10 60 40 30 50 70 90 100 8 0 0.01 0.1 1 10 100 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) t j = 150 c t j = 125 c t j = 25 c 0.1 1 10 100 10 100 re v erse v oltage ( v ) j u nction capaci tance (pf)
bu1006-e3, bu1008-e3, bu1010-e3 www.vishay.com vishay general semiconductor revision: 16-aug-13 4 document number: 84801 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) + - ~~ case type bu 0. 88 0 (22.3) 0. 8 60 (21. 8 ) 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) r 0.125 (3.2) x 45 chamfer 0.0 8 0 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.190 (4. 8 3) 0.210 (5.33) 0.0 8 0 (2.03) 0.065 (1.65) 0.100 (2.54) 0.0 8 5 (2.16) 0.0 8 5 (2.16) 0.065 (1.65) 0.310 (7.9) 0.290 (7.4) 0.020r (typ.) polarity sho w n on front side of case, positi v e lead be v eled corner 0.64 (16.2 8 ) ref. 0.62 (15.7 8 ) ref. 0.055 (1.3 8 5) ref. r 0.10 (2.60) ref. r 0.11 (2.7 8 ) ref. 0.094 (2.39) x 45 ref. 0.055 (1.3 8 5) ref. 0.161 (4.10) 0.142 (3.60) 0.710 (1 8 .0) 0.690 (17.5) 0.02 8 (0.72) 0.020 (0.52) 0.740 (1 8 . 8 ) 0.720 (1 8 .3) v ie w a 0.04 8 (1.23) 0.039 (1.00) 5 typ. 9 typ.
bu1006-e3, bu1008-e3, bu1010-e3 www.vishay.com vishay general semiconductor revision: 16-aug-13 5 document number: 84801 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 forming specification: bu-5s in inches (millimeters) application note (1) device ul approved for safety use dielectric strength of 1500 v. (2) if device is mounted in floating grou nd (f. g.) application, insulator is recommended to use to meet safety requirement. (3) heat sink shape recommendation: 0.0 8 5 (2.16) 0.065 (1.65) 0.310 (7.9) 0.290 (7.4) 0.020r (typ.) 0.100 (2.54) 0.0 8 5 (2.16) 0.160 (4.1) 0.140 (3.5) 0. 88 0 (22.3) 0. 8 60 (21. 8 ) 0.125 (3.2) x 45 chamfer 0.075 (1.9) r + - ~~ 0.0 8 0 (2.03) 0.060 (1.52) 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.0 8 0 (2.03) 0.065 (1.65) 0.319 ( 8 .10) 0.272 (6.90) 0.319 ( 8 .10) 0.272 (6.90) 0.315 ( 8 .0) 0.276 (7.0) 0.02 8 (0.72) 0.020 (0.52) 0.219 (5.55) max. 0.161 (4.10) 0.142 (3.60) 0.740 (1 8 . 8 ) 0.720 (1 8 .3) 5 typ. 9 typ. 0.134 (3.40) 0.0 8 7 (2.20) 2.5 mm min. 2.5 mm min. by safety req u irements heatsink (3)
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